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PD84006L-E Datasheet, ST Microelectronics

PD84006L-E transistor equivalent, rf power transistor.

PD84006L-E Avg. rating / M : 1.0 rating-12

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PD84006L-E Datasheet

Features and benefits


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* Excellent thermal stability Common source configuration Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz Plastic pa.

Application

It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and efficiency makes it.

Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 G.

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